GaSb asosidagi tunnel diodlari volt–amper xarakteristikasining deformatsiya ta‘sirida o‗zgarishi

Mualliflar

Kalit so‘zlar: туннельный диод GaSb, модель Эсаки, деформация, вольт-амперная характеристика (ВАХ), эффективная масса

Annotatsiya

Maqolada GaSb asosidagi tunnel diodlarning volt-amper xarakteristikasiga (VAX) mexanik deformatsiyaning ta‘siri nazariy jihatdan o‗rganildi. Esaki modeliga asoslangan holda, deformatsiya effektlari tunnel toki ifodasiga reduksiyalangan effektiv massa orqali kiritildi. Modellash natijalaridan ko‗rinadiki, deformatsiyasiz holatda VAX klassik nazariya va mavjud tajribaviy ma‘lumotlarga mos keladi. Siqilish va cho‗zilish deformatsiyalarining turlicha ta‘siri aniqlanib, tunnel diodlarning parametrlari mexanik omillar orqali boshqarilishi mumkinligi ko‗rsatildi. Bu yondashuv nanoelektron qurilmalar uchun yangi imkoniyatlar yaratadi.

Foydalanilgan adabiyotlar

1. Esaki L. New phenomenon in narrow germanium p–n junctions. // Phys. Rev., 1958.

2. Pitteliy J., Rindner M. Tunnel diode characteristics under strain. // J. Appl. Phys., 1967.

3. Hosseini et al. Effect of strain on GaSb-based tunnel diodes. // Semicond. Sci. Technol., 2019.

4. Wang J. et al. Uniaxial stress effects on tunneling devices. // IEEE Trans. Electron Devices, 2003.

5. Zhao W. PhD Dissertation. – University of Notre Dame, 2009.

6. Murphy-Armando F. et al. Strain effects on band-to-band tunneling in silicon. // Phys. Rev. B, 2010.

7. Dadamirzaev M. G., Kosimova M. O., Boydedayev S. R., Makhmudov A.S. Comparison of 2D and 3D pn Junction Differential Conductance and Diffusion Capacitance. // East European Journal of Physics, (2), 2024. – Р. 372-379.

8. Uktamova M.K., Nazarov Sh. Investigation of parameters characterizing a tunnel diode under the action of a superhigh-frequency (MW) field in the Tsu-Esaki model. // Web of scientist: International scientific research journal. 2022, vol.3, No.10. – P.800-806. (№23 SJIF, IF:5.95).

9. Gulyamov G., Dadamirzaev G., Dadamirzayev M., Kosimova M. The influence of the microwave field on the characteristics of the pn junction. // Euroasian Journal of Semiconductors Science and Engineering, 2(4), 7. 2020.