2D O‘LCHAMLI P-N-O‘TISHNING O‘TA YUQORI CHASTOTALI MAYDON TA’SIRIDA O‘ZGARISHI

Authors

  • M.O. Kosimova

    Namangan muhandislik qurilish instituti

  • A.S. Maxmudov

    Namangan muhandislik qurilish instituti

Keywords: 2D-dimensional p–n junction, quantum density, microwave field, oxide density, single-layer Fermi surface quantum density MoS2

Abstract

It was studied how the single-layer quantum density of MoS2 changes according to the Fermi level under the action of a microwave field. It was shown that in 2D materials, a higher quantum density value serves to increase the operating speed and sensitivity of transistors, and the oxide density increases the durability of the material under an electric field.

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