Zn VA S KIRISHMA ATOMLARINI KREMNIYGA LEGIRLASHNING DIFFUZIYA USULINING MATEMATIK MODELI

Authors

  • M.K. Haqqulov

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • B.O. Isakov

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • F.Q. Shakarov

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • S.Y. Mahmudov

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • F.O. Sodiqova

    Tashkent State Technical University named after Islam Karimov image/svg+xml

Keywords: silicon, sulfur, zinc, diffusion, model

Abstract

This work is devoted to the mathematical modeling of the diffusion method of impurity Zn and S doped into silicon. In the work, a model of three different diffusion mechanisms was developed, and the results of the calculations showed that the diffusion of Zn first, then S dopants, is preferable in the formation of ZnS binary nanoclusters in silicon.

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