NOTT VA DE-MASSA NAZARIYASIGA ASOSAN TUNNEL DIODINING OʻTISH VAQTINI HISOBLASH

Mualliflar

  • Oʻktamova M.K.

    Namangan muhandislik-qurilish instituti

  • Mamatshoyev A.A.

    Namangan muhandislik-qurilish instituti

Kalit so‘zlar: Nott va De-Massa nazariyasi, diffuziya sigʻimi, tunnel diodining oʻtish vaqti

Annotatsiya

Nottva De-Massa nazariyasiga asosan tunnel diodining oʻtish vaqtini diffuziya sigʻimiga va tunnel diodidagi eng yuqori tok qiymatiga bogʻliqligi hisoblangan. Shuningdek, tunnel diodida hosil boʻladigan eng yuqori kuchlanish qiymatiga va eng past kuchlanish qiymati ham tunnel diodining oʻtish vaqtiga ta’sir qilishi kuzatildi. Tunnel diodining oʻtish vaqtini tunnel diodidagi eng yuqori tok qiymatini, eng quyinuqtadagi tok qiymatiga nisbatiga bogʻliqlik nazariyusulda olindi va tajriba natijalariga moslik darajasi tekshirildi.

Foydalanilgan adabiyotlar

1. Fistul I., Shvarts N.Z. Uspekhi Physicheskikh Science 77, 109-160.(1962).

2. Berger P.R. Negative differential resistance devices and circuits//Comprehensive Semiconductor Science and Technology. 2011, -P. 176-241.

3. Sze S.M. Physics of Semiconductor Devices. // John Wiley & Sons, Inc. 2007, 3, -P. 418-480.

4. Aliyev K.M, Kamilov IK, Ibragimov X.O, Abakarova N.S. Pisma JTF, 37, 42.2011. -P. 809-813.

5. BergerP.R., GulyamovG., DadamirzaevM.G., UktamovaM.K., BoidedaevS.R.2024. Romanian journal of physics.

6. Dashiell M.W., Kolodzey J., Crozat P., Aniel F., Lourtioz J.M. Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy//IEEE Electron Device Lett., 2002.

7. Yan Y. Silicon-based tunnel diode technology.//Silicon-Based Tunnel Diode Technology (researchgate.net),2008.

8. Pawlik J. Development of Tunnel Diode Devices and Models for Circuit Design and Characterization//Dissertation for Doctor of Philosophy in Microsystems Engineering, Rochester Institute of Technology. 2007, -P.1-96.https://scholarworks.rit.edu/theses.

9. Demassa T. A., Knott D. P. The prediction of tunnel diode voltage-current characteristics//Solid State Electron. 1970, vol. 13, -P. 131-138.

10. Lotfi M., Zohir D.A Spice Behavioral Model of Tunnel Diode. // Simulation and Application. International Journal of Control and Automation. 2016, Vol. 9.