EXPOSURE TO HEAT TREATMENT ON THE ENERGY SPECTRUM OF DEFECTS IN SILICON DOPED WITH MOLYBDENUM

Авторы

  • Paluanova A.D.

    Nukus State Pedagogical Institute named after Ajiniyaz image/svg+xml

Ключевые слова: кремний, примесь, молибден, электронно-нейтральная примесь, кислород, углерод, дефектообразование

Аннотация

В статье рассматриваются методами емкостной спектроскопии исследованы процессы образования дефектных центров в кремнии, легированном молибденом. Показано, что диффузионное легирование атомов молибдена в кремний приводит к образованию дефектных центров с глубокими уровнями EC–0,20 эВ и EC–0,29 эВ с сечениями захвата электронов n = 2•10-17 см2 и n = 4. •10-16 см2 в n-Si. В образцах p-Si обнаружен один глубокий уровень с энергией ионизации EV+0,35 эВ и сечением дырочного захвата n= 7·10-15 см2.

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