CHANGE IN THE ELECTRICAL RESISTANCE OF POROUS (Bi0,3Sb0,7)2Te3 THIN FILMS UNDER CYCLIC ALTERNATING DEFORMATION AND TEMPERATURE

Avtorlar

  • Sulaymonov Khusanboy Mannopovich

    Fergana State Technical University image/svg+xml

Gilt sózler: Bi–Sb–Te thin film, cyclic deformation, piezoresistance, intergranular barrier, resistance minimum, fatigue sensing

Annotaciya

Porous (Bi0,3Sb0,7)2Te3 films were studied under cyclic alternating deformation. The resistance minimum shifted from 333 K to 408 K as the number of deformation cycles increased to 5×10⁵, while the magnitude of the negative temperature coefficient of resistance decreased. The results indicate the potential of porous Bi–Sb–Te films for fatigue-damage sensing.

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