Interfeys zaryad holatlarining qayta konfiguratsiyasi va uning metall–dielektrik–yarimo‘tkazgich tuzilmalarning elektrofizik hususiyatlariga ta’siri

Authors

  • Odiljon Okhundedaevich Mamatkarimov

    Namangan State University image/svg+xml

  • Abrorbek Abdulloxonovich Abdulkhayev

    Namangan State University image/svg+xml

  • Salokhiddin Bakhriddinovich Fazliddinov

    Namangan State University image/svg+xml

  • Behzod Hoshimjonovich Quchqarov

    Impuls Medical Institute image/svg+xml

Keywords: metal-dielectric–semiconductor structures, interface states, charge trapping states, capacitance–voltage hysteresis, flat-band voltage, charge relaxation, activation energy, charge exchange kinetics, local potential landscape, reconfiguration of interface states

Abstract

This work analyzes the physical mechanisms responsible for non-ideal electrical effects in metal–dielectric–semiconductor (MDS) structures. The study is based on the kinetic properties of charge states located at the interface and in the near-interface dielectric layer. It is shown that external influences modify the local potential landscape near the interface and redistribute charge-exchange kinetics without generating new defects. As a result, the electrical response of MDS structures is governed by the intrinsic kinetic dynamics of interface states.

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