The influence of microwave radiation to the electrophysical characteristic of AU-TIB –GAAS diode structure

Authors

  • S.G Kaypnazarov

    Nukus Branch of Tashkent University of Informarion Technologies

Keywords: diode structure, electro physical characteristics, micro wave radiation, degradational mechanism, in- ternal mechanic stress, JYCh radiation, Schottky diodes, curvature radius, planar technology, broadening parameters

Abstract

It is defined that during the effecting time of microwave radiation to the Au-TiB -GaAs diode structure for 0-20sc the structure x parameters have improved. In the result of microwave the branchis temperature stability of this diode structure is shown. In the result of these factors the change of external curvature radius has been determined.

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