INFLUENCE OF EXTENDED DEFECTS ON THE PHOTOLUMINESCENT PROPERTIES OF ZNTE/GAAS EPITAXIAL FILMS

Authors

  • Murat Boribaevich Sharibaev

    Karakalpak State University image/svg+xml

  • Oralbay Nauryzbaevich Yusupov

    Karakalpak State University image/svg+xml

  • Shakhnoza Kuvondikovna Kalandarova

    Nukus State Pedagogical Institute named after Ajiniyaz image/svg+xml

Keywords: epitaxial film, monolayer, crystal lattice, photoluminescence, photoexcitation

Abstract

In this work we report the depth inhomogeneity study of MBE grown ZnTe/(001) GaAs epilayers of different thickness by photoluminescence methods. The well profile change was calculated from PL peak energy shift. The role of GaAs diffusion and internal strain in radiation enhanced quantum-size structures degradation is discussed.

References

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