КАРБИДКРЕМНИЕВЫЙ ДЕТЕКТОРНЫЙ ДИОД Au-TiBx(ZrBx)-n-SiC 6H

Authors

  • С.К. Абдижалиев

    Nukus State Pedagogical Institute named after Ajiniyaz image/svg+xml

Keywords: Schottky barrier, power sensor, silicon carbide, detector diodes

Abstract

In this work, the electrical parameters and characteristics of the ultrahigh frequency detector diodes Au-TiBx(ZrBx)-n-SiC 6H are presented. The possibility of using these diodes as power sensors for applications in a wide range of capacities (including power up to 1 W) has been studied.

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