ВЛИЯНИЕ МАГНИТНОГО ПОЛЯ НА КОЭФФИЦИЕНТА НЕИДЕАЛЬНОСТИ ВАХ ДИОДА

Authors

  • Г. Гулямов

    Наманганский инженерно-строительный институт

  • К.Б. Умаров

    Наманганский инженерно-строительный институт

  • Ф.Р. Мухитдинова

    Наманганский инженерно-строительный институт

  • А.З. Солиев

    Наманганский инженерно-строительный институт

Keywords: magnetodiode, magnetic field, nonequilibrium charge carriers, potential barrier height, diffusion length, Hall voltage, magnetoresistance

Abstract

The influence of the magnetic field was calculated on the nonideality coefficient of the current-voltage characteristic. It has been established that, as a result of injection into the magnetodiode, the formation of nonequilibrium charge carriers leads to an increase in the height of the potential barrier and a decrease in the concentration of charge carriers. This reduces the current passing through the diode, increases the base resistance and leads to a change in the non-ideality coefficient of the diode's current-voltage characteristic.

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