ДИФФУЗИОН ТЕХНОЛОГИЯ БИЛАН GexSi1-x АСОСИДА ГЕТЕРО ВА ВАРИЗОН СТРУКТУРА ҲОСИЛ ҚИЛИШ ВА УНИНГ ОПТИК ХУСУСИЯТЛАРИНИ ЎРГАНИШ

Authors

  • Н.Ф. Зикриллаев

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • Ғ.А. Кушиев

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • О.Б. Турсунов

    Tashkent State Technical University named after Islam Karimov image/svg+xml

  • Ш.И. Ҳамроқулов

    Tashkent State Technical University named after Islam Karimov image/svg+xml

Keywords: hetero and graded-gap structures, diffusion, temperature, sensor, photo element

Abstract

The development and creation of solar cells based on GexSi1−x hetero and graded-gap structures is also very interesting. Since the production of such structures based on GexSi1−x with certain parameters and structural allows one to significantly expand the spectral region of sensitivity and allows the creation of new types of photodetectors, sensors, and photocells.

References

1. Hu W. et al. Nature Materials 13, 705 2014.

2. Mitrano M. et al.. Nature 530, 461 2016.

3. Kornilovitch P. Int.J.Mod.Phys. B 30, 1650105 2016.

4. Grifoni M. and Hänggi P. Physics Reports 304, 299. 1998.

5. Alexandrov A.S. and Yavidov B. Ya. Phys. Rev. B 69, 073101. 2004.

6. B.Ya.Yavidov et al.. Physica B 407, 2490. 2012.

7. F.Großmann et al.. Z.Phys. B – Condensed Matter 84, 315. 1991.

8. H.J.Korsch and M.Glück. Eur.J.Phys. 23, 413. 2002.