KREMNIYGA FOSFOR VA BOR ATOMLARINING KETMA-KET DIFFUZIYASI

Authors

  • G‘.X.Mavlonov

    A.A.Usmonov - tayanch doktorant

  • S.B. Isamov

    A.A.Usmonov - tayanch doktorant

  • Z.T. Kenjayev

    Toshkent davlat texnika universiteti

Keywords: silicon, phosphorus, boron, diffusion, alloying, electron, hole

Abstract

In this work investigated and studied 3 groups of of diffusion samples in silicon, separately phosphorus and boron, sequential diffusion of phosphorus and boron. The aim of this study is to study the interaction and distribution of phosphorus and boron diffusion of silicon. As a result, it was found that when boron diffuses into silicon with a high phosphorus concentration, the atoms of electroactive boron compensate 2,5-3 times more phosphorus atoms and change the type of material conductivity.

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