Влияние ультразвукового облучения на рекомбинационные параметры в структуре Al-Al O –p-CdTe-Mo

Authors

  • А.К Утениязов

    Karakalpak State University image/svg+xml

  • Б.К Даулетмуратов

    Nukus State Pedagogical Institute named after Ajiniyaz image/svg+xml

  • М.Т Нсанбаев

    Nukus State Pedagogical Institute named after Ajiniyaz image/svg+xml

  • А.Т Асанова

    Karakalpak State University image/svg+xml

Keywords: ultrasonic irradiation (UST), film, MOS - structure, injection, pair recombination complex, rapid current growth

Abstract

In the article investigates the effect of ultrasonic irradiation (UST) on the recombination parameters in the Al-Al O–p-CdTe-Mo - 2 3 structure. It was found that the recombination of nonequilibrium carriers in such a structure occurs through complex pair recombination complexes and, as a result of ultrasonic treatments, the number of both small acceptors and deeprecombination centers increases.

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